Sara Fathipour

2015 Best Electron Microscopy Publication Imaging Award

The 2015 Best Electron Microscopy Imaging Publication was awarded to Sara Fathipour, a graduate student with Professor A. Seabaugh in the Department of Electrical Engineering.

Fathipour and coworkers published a paper entitled “Synthesized Multiwall MoS₂ Nanotube and Nanoribbon Field-Effect Transistors”.  Using advanced Transmission Electron Microscopy, the study revealed surprising physical attributes of MoS₂ nanotubes grown by chemical vapor transport and used as the channel in field effect transistors. Instead of being cylindrical in geometry the tubes have an ellipsoidal cross section with a semimajor axis of ~60 nm, a semiminor axis of ~30 nm, and a bending radius on the order of 2 nm. The transistors have ON/OFF current ratios more than 20 x greater than MoS₂ nanotubes field effect transistors grown by other methods. The study was published in Appl. Phys. Lett. 2015, 106, 022114.