SEM/FIB Workstation: Helios G4 Ux (FEI)

The Helios G4 Ux™ Workstation

Fastest and easiest preparation of the highest-quality, site-specific, ultra-thin TEM and APT samples using the new Phoenix ion column with unmatched low-voltage performance
Shortest time to nanoscale information using best-in-class Elstar™ electron column
Reveal the finest details with the next-generation UC+ monochromator technology with higher current, enabling sub-nanometer performance at low energies
The most complete sample information with sharp, refined, and charge-free contrast obtained from up to 7 integrated in-column and below-the-lens detectors.
The highest quality, multi-modal subsurface and 3D information with the most precise targeting of the region of interest using optional Auto Slice & View™ 4 (AS&V4) software.
Fast, accurate, and precise milling and deposition of complex structures with critical dimensions of less than 10 nm
Precise sample navigation tailored to individual application needs thanks to the high stability and accuracy of the 150 mm Piezo stage and in-chamber Nav-Cam.
Artifact-free imaging based on integrated sample cleanliness management and dedicated imaging modes such as SmartScan™ and DCFI.

For more information on using this instrument, please refer to our policies and rates.

Ux1 Stem Hadf 005 1

Alumina Spheres

Dual-mode magnetic immersion / field free lens electron optics with ultra-high brightness NG emitter and UC+ technology.

Source: Schottky field emitter mounted on the NG hot-swap gun module
Source lifetime: One (1) year guaranteed
Acceleration Voltage: 350 V to 30 kV
Landing energies: Adjustable from 20 eV to 30 keV
Beam current: 0.8 pA – 100 nA
Resolution: 0.6 nm at 15 – 2 kV 0.7 nm at 1 kV (with Beam Deceleration) 1.0 nm at 500 V (with Beam Deceleration and ICD)

Phoenix field emission focused ion beam optics with liquid Gallium ion emitter, two-stage differential pumping and time of flight correction.

Source lifetime: 1000 hours
Voltage: 500 V to 30 kV
Beam current: 0.1 pA - 65 nA (15-position aperture strip)
Resolution: 4.0 nm at 30 kV using preferred statistical method 2.5 nm at 30 kV using selective edge method 500 nm at 500 V using preferred statistical method
Detection: Optional ICE detector (FIB optimized, secondary ion and electron detector)

High-resolution digital scanning engine controlled from the User Interface.

Resolution: 512x442, 1024x884, 2048x1768, 4096x3536 pixels (conventional) 768x512, 1536x1024, 3072x2048, 6144x4096 pixels (widescreen)
Minimum Dwell Time: 25 ns/pixel Electronic scan rotation by n x 360 degrees

High-resolution digital patterning engine controlled from the User Interface