Helios 5 Hydra CX
The Helios 5 Hydra CX DualBeam is a multi-species plasma focused ion beam scanning electron microscope (PFIB-SEM) designed for high-resolution imaging, ultra-fast 3D characterization, and high-throughput sample preparation. Equipped with an Elstar UC+ electron column and a multi-gas PFIB column, the system supports versatile ion milling (Xenon, Argon, Nitrogen, and Oxygen) alongside high-resolution electron optics.
Features & Specifications
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Elstar UC+ Electron Column: Ultra-high resolution (UHR) imaging featuring dual-mode magnetic immersion / field-free electron optics and UC monochromator technology.
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Electron Beam Resolution:
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0.6 nm @ 2 kV (TLD, UC-mode ON).
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0.7 nm @ 1 kV (TLD, UC-mode ON).
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1.0 nm @ 500 V (ICD, UC-mode ON).
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Multi-Gas Plasma FIB (PFIB) Column: Multi-species ion beam column supporting Xenon, Argon, Nitrogen, and Oxygen ions for tailored milling and sample preparation.
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PFIB Ion Beam Resolution:
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20 nm @ 30 kV (Xenon).
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25 nm @ 30 kV (Argon, Nitrogen, Oxygen).
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In-Chamber Detection System: Includes Through-Lens Detector (TLD) and In-Column Detector (ICD) for high-resolution secondary electron (SE) and backscattered electron (BSE) detection across a 0.05–30 kV landing energy range.
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Retractable STEM3+ Detector: Enables high-resolution scanning transmission electron microscopy imaging in bright field, dark field, and custom annular dark field modes with resolution under 0.6 nm.
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Beam Deceleration Technology: Low-energy landing mode with stage biasing for charge control and surface imaging of non-conductive specimens.
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EasyLift NanoManipulator: Precision sample handling and TEM lamella lift-out with insertion repeatability within sub-micron precision and compucentric tip rotation.
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Gas Injection System (GIS) Options: Automated gas delivery supporting precursor chemistry deposition (Tungsten, Carbon) and gas-assisted etching (IEE, Dx Delayering).
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Integrated Charge Neutralizer: Chamber-mounted charge neutralization system to mitigate sample charging during FIB milling and imaging on insulating materials.